Spectroscopic sensor device and electronic equipment

ABSTRACT

A spectroscopic sensor that applies lights in a wavelength band containing plural wavelengths to an object and spectroscopically separates reflected lights or transmitted lights from the object using plural light band-pass filters that transmit the respective specific wavelengths and plural photosensor parts to which corresponding transmitted lights are input based on output results of independent photosensors. The spectroscopic sensor may be integrated in a semiconductor device or module by integration using a semiconductor process and downsizing may be realized.

CROSS REFERENCE

This is a divisional application of application Ser. No. 14/341,221filed Jul. 25, 2014 which claims priority to Japanese Patent ApplicationNo. 2010-048848 filed Mar. 5, 2010 including the specification, drawingsand abstract is incorporated herein by reference in its entirety.

BACKGROUND

1. Technical Field

The present invention relates to a spectroscopic sensor device,electronic equipment, etc.

2. Related Art

In medical, agricultural, environmental fields etc., spectroscopicsensors are used for diagnoses and inspections of objects. For example,in medical fields, pulse oximeters that measure oxygen saturation in theblood using light absorption of hemoglobin are used. Further, in theagricultural fields, sugar content meters that measure the sugarcontents of fruits using light absorption of sugar.

However, in spectroscopic sensors in related art, there is a problemthat downsizing is difficult. For example, in a spectroscopic sensorthat acquires a continuous spectrum, it is necessary to provide a prismfor generation of the continuous spectrum or the like and secure anoptical path length, and the device becomes larger. Accordingly, it isdifficult to provide many sensors, constantly provide sensors for anobject to be inspected, or the like.

Here, Patent Document 1 (JP-A-6-129908) discloses a technique oflimiting a transmission wavelength band of a filter by limiting theincident angle of incident light using an optical fiber. Further, PatentDocument 2 (JP-2006-351800) discloses a technique of sensing light inplural wavelength bands using multilayer filters having differentthicknesses with respect to each sensor.

SUMMARY

An advantage of some aspects of the invention is to provide aspectroscopic sensor device, electronic equipment, etc. that can bedownsized.

One aspect of the invention relates to a spectroscopic sensor deviceincluding a light source unit that applies a light in a wavelength bandcontaining plural wavelengths as targets of detection, and aspectroscopic sensor to which a light obtained by application of thelight from the light source unit to an object of observation enters,wherein the spectroscopic sensor has plural light band-pass filtershaving different transmission wavelengths, and plural photosensor parts,the first light band-pass filter of the plural light band-pass filtershas a wavelength characteristic of transmitting a first specificwavelength, the second light band-pass filter of the plural lightband-pass filters has a wavelength characteristic of transmitting asecond specific wavelength different from the first specific wavelength,the first photosensor of the plural photosensors senses a light havingthe first specific wavelength transmitted through the first lightband-pass filter, and the second photosensor of the plural photosensorssenses a light having the second specific wavelength transmitted throughthe second light band-pass filter.

According to the one aspect of the invention, the light obtained byapplication of the light from the light source unit to the object ofobservation is allowed to enter the spectroscopic sensor. Further, thelight having the first specific wavelength transmitted through the firstlight band-pass filter is sensed by the first photosensor and the lighthaving second specific wavelength transmitted through the second lightband-pass filter is sensed by the second photosensor. Thereby,downsizing of the spectroscopic sensor device or the like may berealized.

Further, in another aspect of the invention, the spectroscopic sensordevice may include a light blocking member that blocks the lightentering the spectroscopic sensor from the light source unit not via theobject of observation when a reflected light obtained by application ofthe light from the light source unit to the object of observation entersthe spectroscopic sensor.

In this case, the light entering the spectroscopic sensor from the lightsource unit not via the object of observation may be blocked, and thereflected light obtained by application of the light from the lightsource unit to the object of observation may be allowed to enter thespectroscopic sensor.

Furthermore, in another aspect of the invention, the light source unitmay apply the light across a facing surface that faces the object ofobservation, the spectroscopic sensor may receive the light enteringacross the facing surface, and the light blocking member may be providedbetween the light source unit and the spectroscopic sensor.

In this case, the light blocking member is provided between the lightsource unit and the spectroscopic sensor, and thereby, the lightentering the spectroscopic sensor from the light source unit not via theobject of observation may be blocked.

In addition, in another aspect of the invention, the plural photosensorparts may be arranged in an array at a first direction side of the lightsource unit in a plan view with respect to the facing surface that facesthe object of observation.

In this case, the plural photosensor parts are arranged in the array atthe first direction side of the light source unit, and thereby, thereflected lights obtained by the application of the light from the lightsource unit to the object of observation may be allowed to enter thespectroscopic sensor.

Further, in another aspect of the invention, the plural photosensorparts may be arranged around the light source unit in a plan view withrespect to the facing surface that faces the object of observation.

In this case, the plural photosensor parts are arranged around the lightsource unit, and thereby, the reflected light obtained by theapplication of the light from the light source unit to the object ofobservation may be allowed to enter the spectroscopic sensor.

Furthermore, in another aspect of the invention, the light source unitmay be arranged around the plural photosensor parts in a plan view withrespect to the facing surface that faces the object of observation.

In addition, in another aspect of the invention, the light source unitincludes plural light sources, and the plural light sources are arrangedaround the plural photosensor parts in a plan view with respect to thefacing surface that faces the object of observation.

In this case, the light source unit is arranged around the pluralphotosensor parts, and thereby, the reflected lights obtained by theapplication of the light from the light source unit to the object ofobservation may be allowed to enter the spectroscopic sensor.

Further, in another aspect of the invention, the spectroscopic sensordevice may include an angle limiting filter for limiting incident anglesof incident lights to light receiving areas of the plural photosensorparts.

In this case, since the incident angles of incident lights to the lightreceiving areas of the plural photosensor parts are limited, thetransmission wavelength bands of the plural light band-pass filters maybe limited. Further, the light entering the spectroscopic sensor fromthe light source unit not via the object of observation may be blocked.

Furthermore, in another aspect of the invention, the angle limitingfilter may be formed by a light blocking material formed on impurityregions for the plural photosensor parts using a semiconductor process.

In this case, the light blocking material may be formed on the impurityregions for the plural photosensor parts using the semiconductorprocess.

In addition, in another aspect of the invention, the angle limitingfilter may be formed at a wiring layer forming step of another circuitformed on a semiconductor substrate.

In this case, the angle limiting filter may be formed at the wiringlayer forming step of the other circuit formed on the semiconductorsubstrate.

Further, in another aspect of the invention, the angle limiting filtermay be formed by a conducting plug of a contact hole provided in aninsulating film stacked on the semiconductor substrate.

In this case, the angle limiting filter may be formed by the conductingplug of the contact hole provided in the insulating film stacked on thesemiconductor substrate.

Furthermore, in another aspect of the invention, the light blockingmaterial forming the angle limiting filter may be a light absorbingmaterial or a light reflecting material.

In this case, the light blocking material forming the angle limitingfilter may be formed by the light absorbing material or the lightreflecting material.

In addition, in another aspect of the invention, the angle limitingfilter may be formed using the semiconductor substrate left afterformation of holes for receiving lights towards the impurity regions forthe plural photosensor parts from a rear surface side of thesemiconductor substrate when the surface on which the impurity regionsfor the plural photosensor parts are formed is a front surface of thesemiconductor substrate.

In this case, the angle limiting filter may be formed using thesemiconductor substrate left after formation of the holes for receivinglights towards the impurity regions for the plural photosensor partsfrom the rear surface side of the semiconductor substrate.

Further, in another aspect of the invention, the plural light band-passfilters may be formed by multilayer thin films tilted at angles inresponse to the transmission wavelengths relative to the semiconductorsubstrate.

In this case, the plural light band-pass filters may be formed bymultilayer thin films tilted at the angles in response to thetransmission wavelengths relative to the semiconductor substrate.

Furthermore, in another aspect of the invention, the spectroscopicsensor device may include a tilted structure provided on the anglelimiting filter, wherein the tilted structure has tilted surfaces atangles in response to the transmission wavelengths of the plural lightband-pass filters relative to the semiconductor substrate, and themultilayer thin films are formed on the tilted surfaces.

In this case, the multilayer thin films are formed on the tiltedsurfaces of the tilted structure, and thereby, the multilayer thin filmstilted at the angles in response to the transmission wavelengths may beformed.

In addition, in another aspect of the invention, the light blockingmaterial may be provided on the rear surface of the semiconductorsubstrate left after formation of the holes for receiving lights andwall surfaces of the holes for receiving lights.

In this case, the light blocking material may be provided on the rearsurface of the semiconductor substrate left after formation of the holesfor receiving lights and side surfaces of the holes for receivinglights.

Further, in another aspect of the invention, the light blocking materialmay be a light absorbing material or a light reflecting material.

In this case, the light blocking material may be formed by the lightabsorbing material or the light reflecting material.

Furthermore, still another aspect of the invention relates to electronicequipment including the spectroscopic sensor device according to theabove aspect.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIGS. 1A and 1B show a configuration example of a spectroscopic sensordevice of the embodiment.

FIGS. 2A and 2B show a first modified example of the spectroscopicsensor device.

FIG. 3 shows a second modified example of the spectroscopic sensordevice.

FIG. 4 shows a third modified example of the spectroscopic sensordevice.

FIG. 5 shows a fourth modified example of the spectroscopic sensordevice.

FIG. 6 shows a first detailed configuration example of a spectroscopicsensor.

FIG. 7 shows the first detailed configuration example of thespectroscopic sensor.

FIG. 8 shows a first modified example of the spectroscopic sensor.

FIG. 9 shows a second modified example of the spectroscopic sensor.

FIG. 10 shows a third modified example of the spectroscopic sensor.

FIG. 11 shows a fourth modified example of the spectroscopic sensor.

FIGS. 12A and 12B are explanatory diagrams of transmission wavelengthbands of light band-pass filters.

FIG. 13 shows a first manufacturing method of the spectroscopic sensor.

FIG. 14 shows the first manufacturing method of the spectroscopicsensor.

FIG. 15 shows the first manufacturing method of the spectroscopicsensor.

FIGS. 16A and 16B show a second detailed configuration example of thespectroscopic sensor.

FIG. 17 shows the second detailed configuration example of thespectroscopic sensor.

FIG. 18 shows a second manufacturing method of the spectroscopic sensor.

FIG. 19 shows the second manufacturing method of the spectroscopicsensor.

FIG. 20 shows the second manufacturing method of the spectroscopicsensor.

FIG. 21 shows a configuration example of electronic equipment.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, preferred embodiments of the invention will be described indetail. Note that the embodiments described as below do not unduly limitthe subject matter of the invention described in claims, and all of theconfigurations explained in the embodiments are not necessarilyessential as solving means of the invention.

1. Configuration Example

As described above, in medical, health fields or the like, smallspectroscopic sensor devices that are constantly wearable are required,and there is a task of requiring downsizing of the spectroscopic sensordevices. In the embodiment, downsizing of the spectroscopic sensordevice is realized by measuring a specific wavelength band using a lightband-pass filter.

FIGS. 1A and 1B show a configuration example of a spectroscopic sensordevice of the embodiment. The spectroscopic sensor device of theembodiment includes a spectroscopic sensor 100, a light source 110, alight blocking member 120, a display panel 130 (display device), and anoperation input unit 140. As below, the configuration of thespectroscopic sensor device is schematically shown for simplicity, andthe dimensions and ratios in the drawings are different from those ofthe real one.

FIG. 1A is a plan view of a facing surface that faces an object ofobservation. As shown in FIG. 1A, the light source 110 and thespectroscopic sensor 100 are respectively surrounded by the lightblocking member 120. The light blocking member 120 blocks the directlight from the light source 110 to the spectroscopic sensor 100, andblocks the outside light of sun light, illumination light, or the like.The light blocking member 120 is realized by plastic or metal, forexample, and formed using an opaque material that does not transmit awavelength as a target of measurement of the spectroscopic sensor 100.

The light source 110 includes an LED, for example, and applies a lightin a broad wavelength band to the object of observation. The light inthe wide wavelength band is white light, for example, and a light in awide range (e.g., several hundreds of nanometers) containing awavelength to be measured in a narrow range (e.g., several tens ofnanometers) of the spectroscopic sensor 100. Note that, as will bedescribed later, the light source 110 may include plural light sourcesand the respective light sources may apply lights having differentmeasurement wavelengths.

The spectroscopic sensor 100 is formed on one chip of semiconductorsubstrate, for example, and spectroscopically measures (detects) lightin a specific wavelength band. Specifically, the spectroscopic sensor100 includes a semiconductor substrate 10, a circuit 20, first to fourthphotodiodes 31 to 34 (plural photosensor parts in abroad sense), andfirst to fourth light band-pass filters 61 to 64 (first to fourthmultilayer thin-film filters).

The photodiodes 31 to 34 are devices formed on the semiconductorsubstrate 10 for photoelectrically converting incident lights. Thephotodiodes 31 to 34 receive the incident lights respectivelytransmitted through the light band-pass filters 61 to 64.

The light band-pass filters 61 to 64 are optical filters realized bymultilayer thin films formed on the photodiodes 31 to 34, for example,and transmit light in specific wavelength bands. The specific wavelengthbands contain plural bands to be measured and the respective lightband-pass filters transmit the lights in the respective bands to bemeasured. For example, the respective bands to be measured are bands ofseveral tens of nanometers containing measurement wavelengths.

FIG. 1B is a sectional view along A-A of the spectroscopic sensor deviceshown in FIG. 1A. As shown in FIG. 1B, when the spectroscopic sensordevice is used, the end surface (facing surface) of the light blockingmember 120 is in contact with the object of observation. Both the lightsource 110 and the spectroscopic sensor 100 are provided to face theobject of observation. Further, the light from the light source 110 isapplied to the object of observation and the reflected light or thescattered light from the object of observation enters the spectroscopicsensor 100.

As shown by B1, the light blocking member 120 includes a member providedbetween the light source 110 and the spectroscopic sensor 100. Themember has a plate-like shape, for example, and is provided to intersectwith a line connecting the light source and the spectroscopic sensor 100(the light receiving surfaces of the photodiodes). Further, one side ofthe member is in contact with the object of observation in use, and thedirect light from the light source 110 to the spectroscopic sensor 100is blocked.

The configuration of the spectroscopic sensor device of the embodimentis not limited to that of FIGS. 1A and 1B, and various changes may bemade by omitting part of its component elements (e.g., the display panel130, the input unit 140), or adding other component elements (e.g., aninput/output interface).

As described above, in the spectroscopic sensor device, there is arequirement of downsizing of the device. For example, in a spectroscopicsensor that acquires a continuous spectrum, there is a problem that thedevice is upsized by providing a prism etc. and securing an optical pathlength.

In this regard, according to the embodiment, the spectroscopic sensordevice includes the light source unit 110 that applies the light in awavelength band containing plural wavelengths as targets of detection,and the spectroscopic sensor 100 into which the light obtained byapplication of the light from the light source unit 110 to the object ofobservation enters. The spectroscopic sensor 100 has the plural lightband-pass filters 61 to 64 having different transmission wavelengths andthe plural photosensor parts 31 to 34. For example, the first lightband-pass filter 61 has a wavelength characteristic of transmitting afirst specific wavelength and the first photosensor 31 senses the lighthaving the first specific wavelength transmitted through the first lightband-pass filter 61. The second light band-pass filter 62 has awavelength characteristic of transmitting a second specific wavelengthdifferent from the first specific wavelength, and the second photosensor32 senses the light having the second specific wavelength transmittedthrough the second light band-pass filter 62.

Thereby, downsizing of the spectroscopic sensor device or the like maybe realized. That is, only the specific wavelengths arespectroscopically measured using the light band-pass filters 61 to 64,and thus, it becomes unnecessary to provide a prism or the like orsecure the optical path length, and the device may be downsized.Generally, in a spectroscopic sensor device for specific use, thewavelength to be measured is known, and acquirement of the continuousspectrum like in analysis use is not necessarily required. Accordingly,only the specific wavelengths may be measured according to thetechnique, and the device may be downsized.

Here, the object of observation is an object of spectroscopicmeasurement by the spectroscopic sensor device, and, for example, skin,subcutaneous tissues, blood of a human, a liquid of seawater or thelike, agricultural products of fruits or the like, soil, etc. areassumed.

Note that the light obtained by application of the light from the lightsource unit 110 to the object of observation may be reflected light orscattered light from the object of observation as described above, and,as will be described in FIG. 5, it may be the transmitted lighttransmitted through the object of observation.

Further, the embodiment includes the light blocking member 120 thatblocks the light entering the spectroscopic sensor 100 from the lightsource unit 110 not via the object of observation in the case where thereflected light obtained by application of the light from the lightsource unit 110 to the object of observation enters the spectroscopicsensor 100.

More specifically, the light source unit 110 applies illumination lightacross the facing surface that faces the object of observation, and thespectroscopic sensor 100 receives the reflected light or the scatteredlight from the object of observation entering across the facing surface.Further, the light blocking member 120 is provided between the lightsource unit 110 and the spectroscopic sensor 100.

For example, as described above in FIG. 1B, the light source unit 110and the spectroscopic sensor 100 are provided adjacent to each other andthe light blocking member (the part shown by B1) is provided to blockthe direct light from the light source unit 110 to the spectroscopicsensor 100. Alternatively, as will be described later in FIGS. 2A and2B, the spectroscopic sensor 100 may be provided around the light sourceunit 110 and a light blocking member 121 may be provided to surround thelight source 110.

According to the configuration, the light entering the spectroscopicsensor 100 from the light source unit 110 not via the object ofobservation may be blocked and only the reflected light or scatteredlight from the object of observation may be spectroscopically separated.Thereby, S/N deterioration due to direct light may be suppressed.

Here, the above described facing surface is a surface assumed to facethe object of observation in use of the spectroscopic sensor device. Forexample, as shown in FIG. 1B, in the case where the end surface of thelight blocking member 120 is formed in contact with the object ofobservation, the surface containing the end surface is the facingsurface.

Further, in the embodiment, the plural photosensor parts 31 to 34 of thespectroscopic sensor 100 are provided in an array at the first directionside of the light source unit 110 in a plan view with respect to thefacing surface that faces the object of observation. For example, inFIG. 1A, the first direction is a direction shown by D1 and the pluralphotosensor parts 31 to 34 are provided at a certain direction D1 sidenot around the light source unit 110.

Furthermore, as will be described later in FIGS. 2A and 2B, the pluralphotosensor parts 31 to 34 may be provided around the light source unit110 in the plan view with respect to the facing surface that faces theobject of observation.

In addition, as will be described later in FIGS. 3 and 4, the lightsource unit 110 may be provided around the plural photosensor parts 31to 34 in the plan view with respect to the facing surface that faces theobject of observation. For example, as shown in FIG. 3, the light sourceunit 110 may include plural light sources 111 to 114 and the plurallight sources 111 to 114 may be provided around the plural photosensorparts 31 to 34. Alternatively, as shown in FIG. 4, the light source unit110 may include one light source and the one light source may beprovided around the plural photosensor parts 31 to 34.

According to these embodiments, the light source unit 110 and thespectroscopic sensor 100 may compactly be provided and the spectroscopicsensor device may be downsized. Further, in the case where the lightsource unit 110 may be provided around the plural photosensor parts 31to 34, the spectroscopic sensor 100 may be provided farther away fromthe outside light and the S/N deterioration due to outside light may besuppressed.

2. Modified Examples

As already mentioned, various modified configurations may be made forthe spectroscopic sensor device of the embodiment. Using FIGS. 2A to 5,various modified examples of the spectroscopic sensor device will beexplained.

FIGS. 2A and 2B show a first modified example of the spectroscopicsensor device in which photodiodes are provided around the light sourceunit. The spectroscopic sensor device includes a spectroscopic sensor100, a light source unit 110, and light blocking members 121, 122.

FIG. 2A is a plan view of a facing surface that faces an object ofobservation. As shown in FIG. 2A, the light blocking member 121 isprovided to surround the light source unit 110, and plural photodiodes31 to 34 are provided outside of the light blocking member 121. Forexample, the photodiodes 31 to 34 are provided at sides in the first tofourth directions D1 to D4 of the light source unit 110. Here, in a planview with respect to the facing surface, D2 is a direction orthogonal toD1, D3 is a direction opposite to D3, and D4 is a direction opposite toD2. Further, the light blocking member 122 for blocking outside light isprovided around the photodiodes 31 to 34.

FIG. 2B is a sectional view along C-C of the spectroscopic sensor deviceshown in FIG. 2A. As shown in FIG. 2B, the light source unit 110 and thelight blocking member 121 are provided (stacked) on the semiconductorsubstrate 10 on which the photodiodes 31 to 34 are formed. In an area onthe semiconductor substrate 10 where the light source unit 110 isprovided, for example, a driver circuit for the light source 110 anddetection circuits for the photodiodes 31 to 34 are formed. Here, “onthe semiconductor substrate 10” refers to directions perpendicular tothe plane of the semiconductor substrate 10 and at the sides at whichthe photodiodes 31 to 34, the light band-pass filters 61 to 64, etc areformed.

FIG. 3 shows a second modified example of the spectroscopic sensordevice in which plural light sources are provided around thespectroscopic sensor 100. The spectroscopic sensor device includes aspectroscopic sensor 100, first to fourth light sources 111 to 114(plural light sources in a broad sense), and a light blocking member120.

As shown in FIG. 3, the light blocking member 120 is provided tosurround the spectroscopic sensor 100, and the light sources 111 to 114are provided outside of the light blocking member 120. For example, thelight sources 111 to 114 are provided at sides in first to fourthdirections D1 to D4 of the spectroscopic sensor 100. For example, in thecase where the respective transmission wavelengths of the lightband-pass filters 61 to 64 are contained in visible light, the lightsources 111 to 114 apply white light to the object of observation.Alternatively, the light sources 111 to 114 may respectively applylights in different wavelength bands corresponding to the transmissionwavelengths of the light band-pass filters 61 to 64.

FIG. 4 shows a third first modified example of the spectroscopic sensordevice in which one light source surrounds the spectroscopic sensor 100.The spectroscopic sensor device includes a spectroscopic sensor 100, alight source unit 110, and a light blocking member 120.

As shown in FIG. 4, the light blocking member 120 is provided tosurround the spectroscopic sensor 100, and the light source 110 as onepiece having a rectangular shape, a circular shape, or the likesurrounding the outside of the light blocking member 120 is provided.The light source 110 is realized using an EL (Electro-Luminescence) thatradiates white light or the like, for example, and formed on an ELsubstrate 150. The spectroscopic sensor 100 is provided to be stacked onthe EL substrate, for example.

FIG. 5 shows a fourth modified example of the spectroscopic sensordevice that spectroscopically measures transmitted light of an object ofobservation. The spectroscopic sensor device includes a spectroscopicsensor 100, a light source unit 110, a light blocking member 120, adisplay panel 130, and an operation input unit 140.

As shown in FIG. 5, the light source unit 110 and the spectroscopicsensor 100 are provided to be opposed with the object of observation inbetween in use of the spectroscopic sensor device. That is, the lightsource unit 110 applies illumination light to the object of observation,the illumination light transmitted through the object of observationenters the spectroscopic sensor 100, light band-pass filters 61, 63spectroscopically separate the transmitted light, and photodiodes (notshown) sense the spectroscopically separated transmitted light.

3. First Detailed Configuration Example of Spectroscopic Sensor

As described above, using a spectroscopic sensor that measures not acontinuous spectrum but only a specific measurement wavelength, thespectroscopic sensor device may be downsized. However, there is aproblem that the size of the spectroscopic sensor device is restrictedaccording to the size of the spectroscopic sensor itself.

However, there is a task of improving wavelength selectivity of thespectroscopic sensor. For example, as will be described later, in thespectroscopic sensor of the embodiment, an angle limiting filter forlimiting the transmission wavelength band of the light band-pass filteris provided. In this regard, if the angle limiting filter and the lightband-pass filter are formed in members, the light is diffused andattenuated on the bonded surfaces of the members, and the wavelengthselectivity becomes lower.

Further, for example, in the above described Patent Document 1, atechnique of limiting the transmission wavelength band of a filter bylimiting the incident angle of incident light using an optical fiber isdisclosed. However, according to the technique, if the numericalaperture of the optical fiber is made smaller for narrowing the band,the transmittance of the incident light becomes lower and the wavelengthselectivity becomes lower.

Furthermore, there is a task of simplifying the manufacturing process ofthe spectroscopic sensor. For example, in Patent Document 2, a techniqueusing multilayer filters having different film thicknesses with respectto each sensor is disclosed. However, according to the technique,separate multilayer film forming steps are necessary with respect toeach film thickness, and the forming steps of the multilayer filmsbecome complex.

Accordingly, in the embodiment, downsizing of the spectroscopic sensoris realized in a simple manufacturing process by forming anangle-limiting filter and a light band-pass filter using a semiconductorprocess.

A first detailed configuration example of the spectroscopic sensor willbe explained using FIGS. 6, 7. As below, the configuration of thespectroscopic sensor will be schematically shown for simplicity, and thedimensions and ratios in the drawings are different from those of thereal one.

FIG. 6 is a plan view with respect to the semiconductor substrate 10 onwhich the spectroscopic sensor is formed. FIG. 6 is the plan view seenfrom the front side on which a circuit 20, an angle limiting filter 41,etc. are formed in the plan view seen from a direction perpendicular tothe plane of the semiconductor substrate 10. As will be described later,multilayer filters are formed on the angle limiting filters 41, 42,however, in FIG. 6, they are not shown for simplicity.

The spectroscopic sensor shown in FIG. 6 includes the semiconductorsubstrate 10, the circuit 20, a first photodiode 31 (an impurity regionfor a first photosensor and the first photodiode in a broad sense), asecond photodiode 32 (an impurity region for a second photosensor andthe second photodiode in a broad sense), the first angle limiting filter41, and the second angle limiting filter 42.

The semiconductor substrate 10 includes a P-type or N-type siliconsubstrate (silicon wafer), for example. On the semiconductor substrate10, the circuit 20, the photodiodes 31, 32, and the angle limitingfilters 41, 42 are formed using a semiconductor process. Here, “on thesemiconductor substrate 10” refers to directions at the sides at whichthe circuit 20, the angle limiting filter 41, etc. are formed of thedirections perpendicular to the plane of the semiconductor substrate 10.

The angle limiting filters 41, 42 are formed in lattice forms in a planview, for example, and limit the incident angles of incident lights tothe photodiodes 31, 32. The circuit 20 includes amplifiers that processoutput signals from the photodiodes 31, 32, A/D conversion circuits,etc., for example.

Note that the configuration of the spectroscopic sensor in theembodiment is not limited to that of FIG. 6, and various changes may bemade by omitting part of its component elements (e.g., the circuit 20),or adding other component elements. For example, the numbers ofphotodiodes and angle limiting filters may be two as described above, ormay be one or more. Further, the angle limiting filters 41, 42 may havelattice forms in the plan view as described above, or other forms.

FIG. 7 shows a sectional view of the spectroscopic sensor. FIG. 7 is thesectional view along D-D section shown in FIG. 6. The spectroscopicsensor shown in FIG. 7 includes a semiconductor substrate 10,photodiodes 31, 32, angle limiting filters 41, 42, a tilted structure 50(angular structure), a first light band-pass filter 61 (a firstmultilayer filter, a first dielectric filter), and a second lightband-pass filter 62 (a second multilayer filter, a second dielectricfilter).

As shown in FIG. 7, the photodiodes 31, 32 are formed on thesemiconductor substrate 10. As will be described later, the photodiodes31, 32 are formed by forming impurity regions using ion implantation orthe like. For example, the photodiodes 31, 32 are realized by P-Njunction between an N-type impurity region formed on a P-substrate andthe P-substrate. Alternatively, they are realized by P-N junctionbetween a P-type impurity region formed on a deep N-well (N-typeimpurity region) and the deep N-well.

The angle limiting filters 41, 42 are formed using a light blockingmaterial having a light blocking property (a light absorbing material ora light reflecting material) with respect to wavelengths detected by thephotodiodes 31, 32. Specifically, the angle limiting filters 41, 42 areformed at wiring forming steps of the semiconductor process and formedby a conducting layer of an aluminum (light reflecting material) wiringlayer or a conducting plug of tungsten (light absorbing material) plugor the like, for example. The aspect ratios of the lengths of the bottomsides (e.g., the longest diagonal lines of the bottom surfaces or thelonger diameters) to the heights of the angle limiting filters 41, 42are set in response to the transmission wavelength bands of the lightband-pass filters 61, 62 (e.g., BW1, BW2, which will be described laterin FIG. 12B). The opening parts (hollow parts) of the angle limitingfilters 41, 42 are formed using transparent materials with respect towavelengths detected by the photodiodes 31, 32, and, for example, formed(filled) by insulating layers of SiO₂ (silicon oxide films) or the like.

The tilted structure 50 is formed on the angle limiting filters 41, 42and has tilted surfaces at different tilt angles in response to thetransmission wavelengths of the light band-pass filters 61, 62.Specifically, on the photodiode 31, plural tilted surfaces at a tiltangle θ1 relative to the plane of the semiconductor substrate 10 areformed, and, on the photodiode 32, plural tilted surfaces at a tiltangle θ2 different from the tilt angle θ1 are formed. As will bedescribed later, the tilted structure 50 is formed by processing theinsulating films of SiO₂ or the like, for example, by etching, CMP, agray scale lithography technology, or the like.

The light band-pass filters 61, 62 are formed by a multilayer thin film60 stacked on the tilted structure 50. The transmission wavelength bandsof the light band-pass filters 61, 62 are determined by the tilt anglesθ1, θ2 of the tilted structure 50 and incident light limited angles(aspect ratios) of the angle limiting filters 41, 42. The lightband-pass filters 61, 62 have configurations by which transmissionwavelengths vary in response to the tilt angles, and are not stacked atseparate steps with respect to each transmission wavelength but stackedat the same multilayer film forming steps.

As described above, for downsizing the spectroscopic sensor device,there is a task of requiring of downsizing of the spectroscopic sensor.Further, there are tasks of improving wavelength selectivity of thespectroscopic sensor and simplifying the manufacturing process.

In this regard, according to the embodiment, the spectroscopic sensorincludes the angle limiting filters 41, 42 for limiting the incidentangles of incident lights to the light receiving areas (light receivingsurfaces) of the photodiodes. Further, the angle limiting filters 41, 42are formed using a light blocking material (a light absorbing materialor a light reflecting material) formed using a semiconductor process onthe impurity regions for the photodiodes 31, 32.

Thereby, the respective component elements of the spectroscopic sensormay be formed using the semiconductor process, and downsizing of thespectroscopic sensor or the like may be realized. That is, by formingthe photodiodes 31, 32 and the angle limiting filters 41, 42 using thesemiconductor process, microfabrication may be easily performed anddownsizing may be realized. Further, compared to the case where theconfiguration is formed by bonding members, the manufacturing processmay be simplified. Furthermore, compared to the case of using opticalfibers as angle limiting filters, reduction of transmitted lights due tothe reduction of limited angles (numerical apertures) may be suppressed.In addition, reduction of transmitted lights due to bonding of membersmay be suppressed. Accordingly, the amounts of lights may be easilysecured, and the transmission wavelength bands may be made smaller bymaking the limited angles smaller.

Here, the semiconductor process refers to a process of formingtransistors, resistance elements, capacitors, insulating layers, wiringlayers, etc. on a semiconductor substrate. For example, thesemiconductor process includes an impurity introduction process, a thinfilm formation process, a photolithography process, an etching process,a planarization process, and a thermal treatment process.

Further, the light receiving areas of the photodiodes refer to areas onthe impurity regions for the photodiodes 31, 32 into which incidentlights that have passed through the angle limiting filters 41, 42 enter.For example, in FIG. 6, they are area corresponding to the respectiveopenings of the lattice-formed angle limiting filters 41, 42.Alternatively, in FIG. 7, they are areas (for example, areas LRA)surrounded by the light blocking material (the light absorbing materialor the light reflecting material) forming the angle limiting filters 41,42.

Further, in the embodiment, the angle limiting filters 41, 42 are formedat the wiring layer forming steps of another circuit 20 formed on thesemiconductor substrate 10. Specifically, the angle limiting filters 41,42 are formed at the same time with the wiring layer formation of thecircuit 20 and formed at all or part of the wiring layer forming steps.For example, the angle limiting filters 41, 42 are formed by aluminum (alight reflecting material in a broad sense) wiring layer formation usingaluminum sputtering, insulating film formation using SiO₂ deposition,contact formation using tungsten (a light absorbing material in a broadsense) deposition, or the like.

In this manner, the angle limiting filters 41, 42 may be formed usingthe semiconductor process on the impurity regions for the photodiodes31, 32. Thereby, it is not necessary to provide a separate process forformation of the angle limiting filters, and the angle limiting filtersmay be formed using a normal semiconductor process.

Note that the angle limiting filters 41, 42 may be formed not only bythe aluminum (light reflecting material) wiring layers or the tungsten(light absorbing material) contacts but also by wiring layers using alight absorbing material of tungsten or the like or contacts using alight reflecting material of aluminum or the like. However, the lightblocking property becomes higher, as the amount of the light absorbingmaterial is larger.

Further, the angle limiting filters 41, 42 may be formed not only by thealuminum (light reflecting material) wiring layers or the tungsten(light absorbing material) contacts but also by aluminum (lightreflecting material) wiring layers or tungsten (light absorbingmaterial) contacts with films of titanium nitride (TiN) or the like as alight absorbing material. The property of the aluminum (light reflectingmaterial) wiring layers change to a light absorption property and thelight absorption of titanium nitride (TiN) is higher than tungsten, andthe light absorption of the contacts becomes higher and the lightblocking property may be further improved.

Furthermore, in the embodiment, the angle limiting filters 41, 42 may beformed using conducting plugs for contact holes provided in theinsulating films stacked on the semiconductor substrate 10. That is,they may be formed only using conducting plugs of tungsten (lightabsorbing material) plugs or the like formed in the insulating films ofSiO₂ or the like without using metal wiring layers of aluminum (lightreflecting material) wiring layers or the like. Note that the anglelimiting filters 41, 42 may be formed not only by the tungsten plugs butalso by other conducting plugs of aluminum, polysilicon, or the like.

In this case, the angle limiting filters 41, 42 may be formed usingconducting plugs.

Here, the above described contact holes refer to contact holes providedfor contacts for conduction between the wiring layers and the wiringlayers, or contact holes provided for via contacts for conductionbetween the wiring layers and the semiconductor substrate.

Further, in the embodiment, the angle limiting filters 41, 42 may beelectrodes that acquire signals from the impurity regions for thephotodiodes 31, 32 formed using conducting layers or conducting plugsformed using the semiconductor process. For example, in the case wherethe impurity regions for the photodiodes 31, 32 are P-type impurityregions, the angle limiting filters 41, 42 in conduction with the P-typeimpurity regions may also serve as anode electrodes of the photodiodes31, 32.

In this case, the angle limiting filters 41, 42 formed using conductinglayers or conducting plugs may be used as the electrodes of thephotodiodes 31, 32. Thereby, it is not necessary to provide electrodesother than the angle limiting filters 41, 42, and the reduction of theamounts of incident lights due to electrodes may be avoided.

In addition, in the embodiment, the angle limiting filters 41, 42 areformed along the outer circumferences of the light receiving areas ofthe photodiodes 31, 32 in the plan view with respect to thesemiconductor substrate 10. Specifically, the impurity regions for thephotodiodes 31, 32 are the respective one light receiving areas, and therespective one angle limiting filters to surround the outercircumferences of the impurity regions are formed. Alternatively, plurallight receiving areas may be set in the impurity regions for thephotodiodes 31, 32, and plural openings may be formed along the outercircumferences of the light receiving areas. For example, as shown inFIG. 6, square light blocking materials surround the respective lightreceiving areas in the plan view, and the squares are arranged in thelattice forms to form the angle limiting filters 41, 42.

Note that the angle limiting filters 41, 42 may not be limited to beclosed along the outer circumferences of the light receiving areas, butmay have discontinuous parts along the outer circumferences or beintermittently arranged along the outer circumferences.

In this case, the angle limiting filters 41, 42 are formed along theouter circumferences of the respective light receiving areas of thephotodiodes 31, 32, and the incident angles of the incident lights tothe respective light receiving areas of the photodiodes 31, 32 may belimited.

Further, in the embodiment, the light band-pass filters 61, 62 areformed using multilayer thin films tilted at the angles θ1, θ2 inresponse to the transmission wavelengths relative to the semiconductorsubstrate 10. More specifically, the light band-pass filters 61, 62 areformed using plural sets of multilayer thin films having differenttransmission wavelengths. Further, the plural sets of multilayer thinfilms have different tilt angles θ1, θ2 different in response to thetransmission wavelengths relative to the semiconductor substrate 10 andare formed at a simultaneous thin film forming step. For example, asshown in FIG. 7, one set of multilayer thin films are formed bycontinuously arranging the plural multilayer thin films at the tiltangle θ1. Alternatively, as will be described later in FIG. 10,multilayer thin films having different tilt angle θ1 to θ3 may beprovided adjacent to each other, and, in the case where the multilayerthin films having the tilt angle θ1 to θ3 are repeatedly provided, oneset of multilayer thin films may be formed by plural multilayer thinfilms having the same tilt angle (e.g., θ1).

In this manner, the light band-pass filters 61, 62 may be formed usingmultilayer thin films tilted at the angles θ1, θ2 in response to thetransmission wavelengths. Thereby, it is not necessary to stack themultilayer thin films having film thicknesses in response to thetransmission wavelengths at separate step with respect to eachtransmission wavelength, and the forming step of the multilayer thinfilms may be simplified.

Here, the simultaneous thin film forming step refers not to a step ofsequentially repeating the same step of forming a first set ofmultilayer thin films and then forming a second set of multilayer thinfilms, but to a step of forming plural sets of multilayer thin films atthe same (simultaneous, single) thin film forming step.

Furthermore, in the embodiment, the spectroscopic sensor includes thetilted structure 50 provided on the angle limiting filters 41, 42. Inaddition, the tilted structure 50 has the tilted surfaces tilted at theangles θ1, θ2 in response to the transmission wavelengths of the lightband-pass filters 61, 62 relative to the semiconductor substrate 10, andthe multilayer thin films are formed on the tilted surfaces.

In this case, the multilayer thin films are formed on the tiltedsurfaces of the tilted structure 50, and the multilayer thin filmstilted at the angles θ1, θ2 in response to the transmission wavelengthsof the light band-pass filters 61, 62 may be formed.

Specifically, in the embodiment, the tilted structure 50 is formed onthe angle limiting filters 41, 42 using the semiconductor process. Forexample, as will be described in FIG. 14 etc., the tilted structure 50is formed by forming steps or a sparse and dense pattern on transparentfilms (insulating films) stacked using the semiconductor process, andperforming at least one of grinding (e.g., CMP) and etching on the stepsor the sparse and dense pattern.

In this manner, the tilted structure may be formed using thesemiconductor process. Thereby, the forming step of the tilted structuremay be simplified. Further, the cost may be reduced compared to the casewhere the tilted structure is formed using a separate member.Furthermore, the reduction of the amount of light on the bonded surfaceof the tilted structure as the separate member may be avoided.

Here, the steps of the insulating films are the level differences of theinsulating film surfaces from the semiconductor substrate surface on thesection of the semiconductor substrate. Further, the sparse and densepatterns of the insulating films are high and low patterns of theinsulating film surfaces from the semiconductor substrate surface on thesection of the semiconductor substrate, and the sparsity and density ofthe insulating films are formed according to the ratios of the higherparts and the lower parts.

Note that the tilted structure 50 may be formed not only by grinding oretching of the steps or the sparse and dense pattern, but using a grayscale lithography technology. In the gray scale lithography technology,the tilted structure is formed by exposing resists to light using a grayscale mask with dark and light parts, and performing etching using theexposed resists.

4. Modified Examples of Spectroscopic Sensor

In the embodiment, the configuration examples of forming the tiltedstructure 50 using the semiconductor process have been explained, andvarious modifications may be embodied in the embodiment.

FIG. 8 shows a first modified example of the spectroscopic sensor inwhich a tilted structure 50 is formed by a separate member and bonded.The spectroscopic sensor shown in FIG. 8 includes a semiconductorsubstrate 10, photodiodes 31, 32, angle limiting filters 41, 42, thetilted structure 50, light band-pass filters 61, 62, an insulating layer70, and a bonding layer 80. As below, the same signs are assigned to thecomponent elements described above in FIG. 7 etc., and their explanationwill appropriately be omitted.

In the first modified example, the parts to the angle limiting filters41, 42 are formed by the semiconductor process in the same manner asthose of the above described configuration examples. The insulatinglayer 70 (or a passivation layer) is stacked on the angle limitingfilters 41, 42. The insulating layer 70 is not necessarily an insulatingfilm as long as it is a transparent film that transmits wavelengths tobe sensed. The tilted structure 50 is formed by hot press of a separatemember of low-melting-point glass or the like with a die, and tiltedsurfaces and multilayer thin films are formed thereon. The tiltedstructure 50 and the insulating layer 70 are bonded using a transparentadhesive that transmits wavelengths to be sensed.

FIG. 9 shows a second modified example of the spectroscopic sensor inwhich multilayer thin films in parallel to the semiconductor substrate10 are formed without using the tilted structure 50. The spectroscopicsensor shown in FIG. 9 includes a semiconductor substrate 10,photodiodes 31, 32, angle limiting filters 41, 42, light band-passfilters 61, 62, and an insulating layer 70.

In the second modified example, the parts to the angle limiting filters41, 42 are formed by the semiconductor process in the same manner asthose of the above described configuration examples, and the insulatinglayer 70 is stacked on the angle limiting filters 41, 42. Then, themultilayer thin films of the light band-pass filters 61, 62 are formedon the insulating layer 70. The multilayer thin films have differentfilm thicknesses in response to the transmission wavelengths of thelight band-pass filters 61, 62, and are stacked at separate formingsteps. That is, when one of the light band-pass filters 61, 62 isformed, the multilayer thin films are stacked while the other is coveredby a photo resist or the like, and thereby, the multilayer thin filmshaving different film thicknesses are formed.

FIG. 10 shows a third modified example of the spectroscopic sensor inwhich impurity regions for photodiodes are sectioned by trenches. Thespectroscopic sensor shown in FIG. 10 includes a semiconductor substrate10, photodiodes 31, 32, angle limiting filters 41, 42, a tiltedstructure 50, light band-pass filters 61 to 63, and an insulating layer70. The photodiode 32 is the same as the photodiode 31, and itsillustration and explanation will be omitted.

In the third modified example, the impurity region of the photodiode 31is sectioned by trenches 90, and photodiodes 31-1 to 31-3 are formed.The trenches 90 are formed by an insulator trench structure of STI(Shallow Trench Isolation) or the like, for example. On the tiltedstructure 50, tilted surfaces at tilt angles θ1 to θ3 are formed, andthe respective tilted surfaces correspond to the photodiodes 31-1 to31-3, respectively. Then, the light band-pass filters 61 to 63 havingdifferent tilt angles are formed on the respective photodiodes 31-1 to31-3, respectively.

In FIG. 10, one light band-pass filter is provided on one photodiode(one region) sectioned by the trench structure, however, in theembodiment, one light band-pass filter may be provided on pluralphotodiodes (plural regions) sectioned by the trench structure.

FIG. 11 shows a fourth modified example of the spectroscopic sensor inwhich amounts of incident lights are increased using a micro-lens array(MLA). The spectroscopic sensor shown in FIG. 11 includes asemiconductor substrate 10, photodiodes 31, 32, angle limiting filters41, 42, a tilted structure 50, light band-pass filters 61, 62, aninsulating layer 70, and a micro-lens array 95. The photodiode 32 is thesame as the photodiode 31, and its illustration and explanation will beomitted.

In the fourth modified example, micro-lenses are formed in therespective openings of the angle limiting filter 41, and the micro-lensarray 95 is formed by the plural micro-lenses. The micro-lens array 95is formed by forming a pattern using photolithography after formation ofthe angle limiting filter 41, etching an SiO₂ film, and depositing amaterial with a higher refractive index than that of SiO₂, for example.

5. Transmission Wavelength Band of Light Band-Pass Filter

As described above, the transmission wavelength band of the lightband-pass filter is set by the tilt angle of the multilayer thin filmand the limited angle of the angle limiting filter. This point willspecifically be explained using FIGS. 12A and 12B. Note that, forsimplicity of explanation, the case where the film thicknesses of thelight band-pass filters 61, 62 are the same will be explained as anexample as below, however, in the embodiment, the film thicknesses ofthe light band-pass filters 61, 62 may be different in response to thetilt angles θ1, θ2. For example, in deposition of thin films, in thecase where the thin films are grown in the perpendicular directionrelative to the semiconductor substrate, the film thicknesses of thelight band-pass filters 61, 62 may be proportional to cos θ1, cos θ2.

As shown in FIG. 12A, the light band-pass filters 61, 62 are formed bythin films having thicknesses d1 to d3 (d2<d1, d3<d1). On and under thethin film having the film thickness d1, plural thin films havingthicknesses d2, d3 are alternately stacked. The thin film having thefilm thickness d2 is formed using a material having different refractiveindex from those of the thin films having thicknesses d1, d3. Note that,in FIG. 12A, for simplicity, the number of layers of the thin filmshaving thicknesses d2, d3 is omitted, however, in practice, several tensto several hundreds of layers of the thin films are stacked on and underthe thin film having the film thickness d1. Further, in FIG. 12A, onelayer of the thin film having the film thickness d1 is shown forsimplicity, however, in practice, plural layers are often formed.

Since the light band-pass filter 61 has a tilt angle θ1 relative to thelight receiving surface of the photodiode 31, the beam perpendicular tothe light receiving surface enters the light band-pass filter 61 at theangle of θ1. Further, given that the limited angle of the angle limitingfilter 41 is Δθ, beams entering the light band-pass filter 61 at (θ1−Δθ)to (θ1+Δθ) reach the light receiving surface of the photodiode 31.Similarly, beams entering the light band-pass filter 62 at (θ2−Δθ) to(θ2+Δθ) reach the light receiving surface of the photodiode 32.

As shown in FIG. 12B, the transmission wavelength band BW1 of the lightband-pass filter 61 is (λ1−Δλ) to (λ1+Δλ). In this regard, thetransmission wavelength λ1=(2×n×d1×cos θ1) for the beam at the incidentangle θ1. Here, n is a refractive index of the thin film having thethickness of d1. Further, (κ1−Δλ)=(2×n×d1×cos(θ1+Δθ)) and(λ1+Δλ)=(2×n×d1×cos (θ1−Δθ)). The half-value width HW (for example,HW<BW1) of the transmission wavelength for the beam at the incidentangle θ1 is determined by the number of stacked layers of the multilayerfilms. The amount of received light of the photodiode 31 is the maximumat the incident angle θ1 perpendicular to the light receiving surfaceand becomes zero at the limited angle, and thus, the amount of receivedlight of the incident light as a whole is represented by a curve shownby a dotted line. The transmission wavelength band BW2 of the lightband-pass filter 62 is similarly (λ2−Δλ) to (λ2+Δλ). For example, in thecase where θ2<θ1, λ2=(2×n×d1×cos θ2)<λ1=(2×n×d1×cos θ1).

According to the embodiment, the angle limiting filters 41, 42 limit theincident angles of the incident lights to (θ1−Δθ) to (θ1+Δθ), (θ2−Δθ) to(θ2+Δθ) and limit the change ranges of the transmission wavelengths to(λ1−Δλ) to (λ1+Δλ), (λ2−Δλ) to (λ2+Δλ). For the light band-pass filters,the bands BW1, BW2 of the specific wavelengths to be transmitted are setaccording to the change ranges of the transmission wavelengths limitedto (λ1−Δλ) to (λ1+Δλ), (λ2−Δλ) to (λ2+Δλ) by the angle limiting filters41, 42.

In this manner, the transmission wavelength bands BW1, BW2 of the lightband-pass filters may be limited by the angle limiting filters 41, 42,and only the lights in the wavelength bands to be measured may besensed. For example, the limited angles of the angle limiting filters41, 42 are set to Δθ≦30°. Desirably, the limited angles of the anglelimiting filters 41, 42 are set to Δθ≦20°.

As above, as shown in FIGS. 1A and 1B, the case where the light blockingmember 120 is provided between the light source unit 110 and thespectroscopic sensor 100 and the light entering from the light sourceunit 110 to the spectroscopic sensor 100 not via the object ofobservation is blocked has been described. However, in the case wherethe object of observation is dynamic, a gap may be produced between theobject of observation and the light blocking member 120 and a slightamount of the light from the light source unit 110 not via the object ofobservation may enter the spectroscopic sensor 100. In this case, theincident angle of the light not via the object of observation becomes adeeper angle (for example, incident angle >30°).

As described above, since the angle limiting filters 41, 42 limit theincident angle of the spectroscopic filter 100 to from 20° to 30°, inthe case where the object of observation is dynamic, the lights enteringthe spectroscopic sensor 100 from the light source unit 110 not via theobject of observation may be eliminated. Further, there is the sameeffect not only for the lights from the light source unit 110, but otherlights (for example, outside lights such as sunlight and fluorescentlights) entering from the gap produced between the object of observationand the light blocking member 120 in the case where the object ofobservation is dynamic. The angle limiting filters 41, 42 also have theadditional effects.

6. First Manufacturing Method of Spectroscopic Sensor

An example of a manufacturing method of the spectroscopic sensor in thefirst detailed configuration example will be explained using FIGS. 13 to15.

First, as shown by S1 in FIG. 13, a N-type diffusion layer (an impurityregion of a photodiode) is formed on a P-type substrate at steps ofphotolithography, ion implantation, and photoresist stripping. As shownby S2, a P-type diffusion layer is formed on the P-type substrate atsteps of photolithography, ion implantation, photoresist stripping andheat treatment. The N-type diffusion layer serves as a cathode of thephotodiode, and the P-type diffusion layer (P-type substrate) serves asan anode.

Then, as shown by S3, contacts are formed. In the forming steps, first,at steps of deposition of SiO₂, and planarization by CMP, an insulatingfilm is formed. Then, at steps of photolithography, anisotropic dryetching of SiO₂, and photoresist stripping, contact holes are formed.Then, at steps of sputtering of TiN, deposition of W (tungsten), andetching back of W, embedding of contact holes is performed. Then, asshown by S4, at steps of sputtering of AL (aluminum), sputtering of TiN,photolithography, anisotropic dry etching of AL and TiN, and photoresiststripping, a first AL wiring is formed.

As shown by S5, at the same steps as S3, S4, via contacts and a secondAL wiring are formed. Then, the step of S5 is repeated at a necessarynumber of times. FIG. 13 shows the case where the third AL wiring hasbeen formed. Then, as shown by S6, at steps of deposition of SiO₂ (shownby a dotted line), and planarization by CMP, an insulating film isformed. In the wiring forming steps thus far, the AL wirings and thetungsten plugs forming the angle limiting filters are stacked.

Then, as shown by S7 in FIG. 14, at steps of deposition of SiO₂,photolithography, anisotropic dry etching of SiO₂, and photoresiststripping, the steps S7′ or the sparse and dense pattern S7″ of theinsulating film (shown by a dotted line) is formed.

Then, as shown by S8, at the step of grinding by CMP, tilted surfaces ofthe tiled structure are formed. The tilted surfaces of the tiledstructure are processed at tilt angles in response to the steps or thesparse and dense pattern of the insulating film.

Then, as shown by S9 in FIG. 15, a multilayer thin film is formed on thetilted surface by alternately performing sputtering of TiO₂ (titaniumoxide film) and sputtering of SiO₂. The TiO₂ film is a thin film with ahigh refractive index, and the SiO₂ film is a thin film with a lowerrefractive index than that of the TiO₂ film.

7. Second Detailed Configuration Example of Spectroscopic Sensor

In the above described embodiment, the case where the angle limitingfilters are formed by wiring layers has been explained, however, in theembodiment, angle limiting filters may be formed on the rear surface ofthe semiconductor substrate using silicon trenches.

A second detailed configuration example of the spectroscopic sensor willbe explained using FIGS. 16A to 17. As below, the configuration of thespectroscopic sensor of the embodiment will be schematically shown forsimplicity, and the dimensions and ratios in the drawings are differentfrom those of the real one.

FIGS. 16A and 16B show plan views with respect to a semiconductorsubstrate 10 on which the spectroscopic sensor is formed. Thespectroscopic sensor shown in FIGS. 16A and 16B includes a semiconductorsubstrate 10, a circuit 20, first and second photodiodes 31, 32, andfirst and second angle limiting filters 41, 42. As will be describedlater, the multilayer filters are formed on the first and second anglelimiting filters 41, 42, however, their illustration is omitted forsimplicity in FIGS. 16A and 16B.

FIG. 16A is the plan view seen from the front side on which impurityregions, wiring layers, etc. are formed in the plan view seen from adirection perpendicular to the plane of the semiconductor substrate 10.On the front side of the semiconductor substrate 10, the photodiodes 31,32 and the circuit 20 are formed using a semiconductor process.

FIG. 16E is the plan view seen from the rear side in the plan view seenfrom a direction perpendicular to the plane of the semiconductorsubstrate 10. On the rear side of the semiconductor substrate 10, theangle limiting filters 41, 42 are formed using silicon trenches towardthe photodiodes 31, 32 formed on the front side. The angle limitingfilters 41, 42 are formed in lattice forms in the plan view, forexample, and limit the incident angles of incident lights entering thephotodiodes 31, 32 from the rear side of the semiconductor substrate 10.

Here, the silicon trench is a technique of trenching the semiconductorsubstrate 10 using a semiconductor process or MEMS(Micro-Electro-Mechanical System). For example, it is a technique offorming holes, grooves, steps, or the like by dry etching on a siliconsubstrate.

Note that the configuration of the spectroscopic sensor of theembodiment is not limited to the configuration in FIGS. 16A, 16B, butvarious changes may be made by omitting part of its component elements(e.g., the circuit 20), or adding other component elements.

FIG. 17 shows a sectional view of the spectroscopic sensor along E-Esection shown in FIG. 16B. The spectroscopic sensor shown in FIG. 17includes a semiconductor substrate 10, a wiring layer 15, light blockingmaterials 25, photodiodes 31, 32, angle limiting filters 41, 42, atilted structure 50, first light band-pass filters 61, 62, and aninsulating layer (a transparent film in a broad sense).

Here, “on” in the embodiment refers to a direction perpendicular to theplane of the semiconductor substrate 10 and away from the semiconductorsubstrate 10. That is, on the rear side, the direction away from thesemiconductor substrate 10 is referred to as “on”.

As shown in FIG. 17, the photodiodes 31, 32 are formed on the front sideof the semiconductor substrate 10. The photodiodes 31, 32 are formed byforming P-type and N-type impurity regions using ion implantation or thelike, and realized by P-N junction between the impurity regions.

On the photodiodes 31, 32, the wiring layer 15 is formed. The wiringlayer 15 is stacked at forming steps of the above described circuit 20etc. The output signals from the photodiodes 31, 32 are input to theabove described circuit etc. by the wirings within the wiring layer 15,and detection-processed.

On the rear side of the semiconductor substrate 10, the angle limitingfilters 41, 42 are formed. The angle limiting filters 41, 42 are formedby the semiconductor substrate 10 left after silicon trenching. On sidesurfaces (wall surfaces) of holes trenched by silicon trenching and therear surface of the semiconductor substrate 10, a light blockingmaterial (a light absorbing material or a light reflecting material) isprovided (formed, stacked). On the other hand, on the bottom surfaces ofthe holes as light receiving surfaces of the photodiodes, no lightblocking material is provided. Further, the wall surfaces of the holestrenched by silicon trenching become wall surfaces of the angle limitingfilters 41, 42, and block light so that incident lights at limitedangles or more may not enter the photodiodes 31, 32. The aspect ratiosof the angle limiting filters 41, 42 are set in response to thetransmission wavelength bands (e.g., BW1, BW2, which have been describedlater in FIG. 12B).

On the angle limiting filters 41, 42, the insulating film 70 filling theopening parts (hollow parts) of the angle limiting filters 41, 42 isformed. For example, the insulating film 70 is formed by an insulatingfilm of SiO₂ (silicon oxide film) or the like. Note that the insulatingfilm 70 does not necessarily have an insulation property as long as itmay be a transparent material with respect to the wavelengths detectedby the photodiodes 31, 32.

On the insulating film 70, the tilted structure 50 is formed. The tiltedstructure 50 has tilted surfaces at tilt angles θ1, θ2 in response tothe transmission wavelengths of the light band-pass filters 61, 62. Onthe tilted structure 50, the multilayer thin film 60 forming the lightband-pass filters 61, 62 is stacked. The transmission wavelength bandsof the light band-pass filters 61, 62 are determined by the tilt anglesθ1, θ2 of the tilted structure 50 and limited angles of the anglelimiting filters 41, 42.

Note that the above described first to fourth modified examples may beapplied to the second detailed configuration example. That is, thetilted structure 50 may be formed using low-melting-point glass or thelike and bonded onto the angle limiting filters 41, 42. Further,multilayer thin films in parallel to the semiconductor substrate 10 maybe formed with respect to each transmission wavelength. Furthermore, thephotodiodes 31, 32 may be sectioned into plural photodiodes by STI. Inaddition, MLA for increasing the amounts of light may be provided in theopenings of the angle limiting filters 41, 42.

According to the second detailed configuration example, the anglelimiting filters 41, 42 are formed by forming holes for receiving lightsin which light blocking materials (light absorbing films or lightreflecting films or light absorbing films+light reflecting films) areprovided on the rear side surfaces and wall surfaces towards theimpurity regions for the photodiodes 31, 32 from the rear side of thesemiconductor substrate 10.

Thereby, the spectroscopic sensor may be formed using the semiconductorprocess or the MEMS technology, and downsizing of the spectroscopicsensor or the like may be realized. That is, the photodiodes 31, 32 areformed by the semiconductor process and the angle limiting filters 41,42 are formed by rear side trenching of the semiconductor substrate 10,and thus, microfabrication may easily be performed and downsizing may berealized.

Further, in the embodiment, the angle limiting filters 41, 42 are formedalong the outer circumferences of the light receiving areas (forexample, the areas LRA shown in FIG. 17) of the photodiodes 31, 32 inthe plan view with respect to the semiconductor substrate 10.Specifically, plural light receiving areas are set in the impurityregions for the photodiodes 31, 32, and plural openings are formed alongthe outer circumferences of the plural light receiving areas. Forexample, as shown in FIGS. 16A and 16B, square light blocking materialssurround the respective light receiving areas in the plan view, and thesquares are arranged in the lattice forms to form the angle limitingfilters 41, 42.

In this manner, the angle limiting filters 41, 42 are formed along theouter circumferences of the respective light receiving areas ofphotodiodes 31, 32, and thus, the incident angles of the incident lightsto the respective light receiving areas of the photodiodes 31, 32 may belimited.

8. Second Manufacturing Method of Spectroscopic Sensor

An example of a manufacturing method of the spectroscopic sensor in thesecond detailed configuration example will be explained using FIGS. 18to 20.

First, as shown by S101 in FIG. 18, at the steps described above by S1to S6 in FIG. 13, photodiodes and a wiring layer are formed on the frontside of the substrate. Then, as shown by S102, a passivation film isformed on the insulating film at steps of polyimide coating, and curing.

Then, as shown by S103, the thickness of the P-type silicon substrate isadjusted by grinding the rear surface of the P-type silicon substrate.Then, as shown by S104, at steps of photolithography, anisotropic dryetching of the P-type silicon substrate, and photoresist stripping,silicon trenches are formed.

Then, as shown by S105, at steps of deposition of TiN films, andanisotropic dry etching of the TiN films, light absorbing films(anti-reflection films) of TiN are formed on the side surfaces (innerwalls) of the silicon trenches and the rear surface of the semiconductorsubstrate. Then, as shown by S106, at steps of deposition of a SiO₂ film(shown by a dotted line), and planarization of the SiO₂ film by CMP,embedding of the silicon trenches are performed. In this manner, theangle limiting filters are formed at the steps of S103 to S106.

Then, as shown by S107 in FIG. 19, at steps of deposition of a SiO₂film, photolithography, anisotropic dry etching of the SiO₂ film, andphotoresist stripping, steps or a sparse and dense pattern of theinsulating film are formed. Then, as shown by S108, at the step ofgrinding of the SiO₂ film, tilted surfaces of the tiled structure areformed. In this regard, the tilted surfaces of the tiled structure areprocessed at tilt angles in response to the steps or the sparse anddense pattern of the insulating film.

Then, as shown by S109 in FIG. 20, a multilayer thin film is formed onthe tilted surfaces by alternately performing sputtering of TiO₂(titanium oxide film) and sputtering of SiO₂. The TiO₂ film is a thinfilm with a high refractive index, and the SiO₂ film is a thin film witha lower refractive index than that of the TiO₂ film.

9. Electronic Equipment

FIG. 21 shows a configuration example of electronic equipment includingthe spectroscopic sensor device of the embodiment. For example, aselectronic equipment, a pulsimeter, a pulse oximeter, a blood sugarmeter, a fruit sugar content meter, or the like is assumed.

The electronic equipment shown in FIG. 21 includes a spectroscopicsensor device 900, a microcomputer 970 (CPU), a storage device 980, anda display device 990. The spectroscopic sensor device 900 includes anLED 950 (light source), an LED driver 960, and a spectroscopic sensor910. The spectroscopic sensor 910 is integrated in one chip of IC, forexample, and includes a photodiode 920, a detection circuit 930, and anA/D conversion circuit 940.

The LED 950 applies white light, for example, to an object ofobservation. The spectroscopic sensor device 900 spectroscopicallyseparates the reflected light and the transmitted light from the objectof observation, and acquires signals of the respective wavelengths. Themicrocomputer 970 controls the LED driver 960 and acquires signals fromthe spectroscopic sensor 910. The microcomputer 970 displaysrepresentation based on the acquired signals on the display device 990(for example, a liquid crystal display device) or stores data based onthe acquired signals in the storage device 980 (for example, a memory ora magnetic disc).

The embodiment has been specifically explained as described above,however, a person skilled in the art may easily understand that manymodifications without substantially departing from new matter andeffects of the invention may be made. Therefore, the modified examplesare within the scope of the invention. For example, in specifications ordrawings, terms (photosensor, thin-film filter, semiconductor substrate,etc.) described with terms (photodiode, light band-pass filter, siliconsubstrate, etc.) in broader senses or synonyms at least at once may bereplaced by the different terms in any part of the specifications ordrawings. Further, the configurations and operations of thespectroscopic sensor, the spectroscopic sensor device, electronicequipment, etc. are not limited to those that have been explained in theembodiment, but various changes may be embodied.

What is claimed is:
 1. A pulsimeter comprising: a light source unit thattransmits light to a body of a user; and a spectroscopic sensor thatreceives incident light from the light source unit reflected from ortransmitted through the body of the user; the spectroscopic sensorincluding: a photosensor that has an impurity area formed on asemiconductor substrate, an angle limiting filter that includes aplurality of light blocking materials which have electricalconductivity.
 2. The pulsimeter of claim 1, wherein the light blockingmaterial includes a light absorbing material.
 3. The pulsimeter of claim1, wherein the light blocking material is formed by a conducting plugprovided in an insulating material disposed on the semiconductorsubstrate.
 4. The pulsimeter of claim 3, wherein the conducting plug isformed in a contact hole provided in the insulating material.
 5. Thepulsimeter of claim 1, wherein the light blocking material is comprisedof tungsten or titanium nitride.
 6. The pulsimeter of claim 1, whereinthe angle limiting filter is disposed on the impurity area formed on asemiconductor substrate.
 7. The pulsimeter of claim 1, wherein theplurality of light blocking materials forms in lattice form in a planview.
 8. The pulsimeter of claim 1, wherein the angle limiting filtertransmits an electrical signal from the impurity region.
 9. Thepulsimeter of claim 1, wherein the angle limiting filter is an electrodeof the spectroscopic sensor.
 10. A spectroscopic sensor comprising: alight source unit that transmits light to a body of a user; and a photosensor that detects incident light from the light source unit reflectedfrom or transmitted through the body of the user; the photo sensorcomprising: an impurity area formed on a semiconductor substrate, anangle limiting filter that is formed by a plurality of light blockingmaterials which have electrical conductivity.
 11. The spectroscopicsensor of claim 10, wherein the light blocking material includes a lightabsorbing material.
 12. The spectroscopic sensor of claim 10, whereinthe light blocking material is formed by a conducting plug provided inan insulating material disposed on the semiconductor substrate.
 13. Thespectroscopic sensor of claim 12, wherein the conducting plug is formedin a contact hole provided in the insulating material.
 14. Thespectroscopic sensor of claim 10, wherein the light blocking material iscomprised of tungsten or titanium nitride.
 15. The spectroscopic sensorof claim 10, wherein the angle limiting filter is disposed on theimpurity area formed on a semiconductor substrate.
 16. The spectroscopicsensor of claim 10, wherein the plurality of light blocking materialsforms in lattice form in a plan view.
 17. The spectroscopic sensor ofclaim 10, wherein the angle limiting filter transmits an electricalsignal from the impurity region.
 18. The spectroscopic sensor of claim10, wherein the angle limiting filter is an electrode of the photosensor.